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40MT120UH Datasheet

  • 40MT120UH

  • HALF-BRIDGE IGBT MTP UltraFast NPT IGBT

  • 13頁(yè)

  • IRF

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上傳產(chǎn)品規(guī)格書

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I27126 rev. C 02/03
40MT120UH
"HALF-BRIDGE" IGBT MTP
Features
Technology
鈥?Positive V
CE(ON)
Temperature Coefficient
鈥?10碌s Short Circuit Capability
鈥?HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
鈥?Low Diode V
F
鈥?Square RBSOA
鈥?Aluminum Nitride DBC
鈥?Optional SMT Thermistor (NTC)
鈥?Very Low Stray Inductance Design for
High Speed Operation
鈥?UL approved (file E78996)
鈥?/div>
UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
V
CES
= 1200V
I
C
= 80A
T
C
= 25擄C
Benefits
Applications
鈥?Rugged with UltraFast Performance
鈥?Benchmark Efficiency above 20KHz
鈥?Outstanding ZVS and Hard Switching
Operation
鈥?Low EMI, requires Less Snubbing
鈥?Excellent Current Sharing in Parallel
Operation
鈥?Direct Mounting to Heatsink
鈥?PCB Solderable Terminals
鈥?/div>
Optimized for Welding, UPS and SMPS
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
I
I
I
I
C
Max
1200
@ T
C
= 25擄C
@ T
C
= 105擄C
80
40
160
160
@ T
C
= 105擄C
21
160
鹵 20
2500
463
185
@ T
C
= 25擄C
@ T
C
= 100擄C
Units
V
A
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
CM
LM
F
FM
V
GE
V
ISOL
P
D
V
W
www.irf.com
1

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