3SK252 Datasheet

IC型號：
3SK252
PDF描述：
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD...
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6頁
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NEC

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK252

RF AMPLIFIER FOR CATV TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

鈥?Low V

Use

鈥?Driving Battery

0.4

+ 0.1

鈥?0.05

= 3.5 V)

NF1 = 2.0 dB TYP. (f = 470 MHz)

NF2 = 0.8 dB TYP. (f = 55 MHz)

= 19.0 dB TYP. (f = 470 MHz)

PACKAGE DIMENSIONS

(Unit: mm)

2.8

+ 0.2

鈥?0.3

1.5

+ 0.2

鈥?0.1

0.4

+ 0.1

鈥?0.05

5藲

0.4

+ 0.1

鈥?0.05

5藲

鈥?Low Noise Figure :

鈥?High Power Gain :

鈥?Suitable for use as RF amplifier in CATV tuner.

2.9 鹵 0.2

(1.8)

0.95

鈥?Automatically Mounting :

鈥?Package

Embossed Type Taping

4 Pins Mini Mold

ABSOLUTE MAXIMUM RATINGS (T

= 25

擄

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

*1:

鈮?/div>

10 k鈩?/div>

*2:

Free air

DSX

G1S

G2S

G1D

G2D

stg

鹵8

200

125

鈥?5 to +125

擄C

0.85

0.6

+ 0.1

鈥?0.05

5藲

1.1

+ 0.2

鈥?0.1

0.8

5藲

PIN CONNECTIONS

Source

Drain

Gate2

Gate1

PRECAUTION:

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

Document No. P10582EJ2V0DS00 (2nd edition)

(Previous No. TD-2373)

Date Published August 1995 P

Printed in Japan

0~0.1

漏

0.16

+ 0.1

鈥?0.05

(1.9)

1993

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