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3N190 Datasheet

  • 3N190

  • P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

  • 256.78KB

  • 2頁

  • LINEAR

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3N190 3N191
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT
LOW TRANSFER CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
@ 25 擄C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation One Side
Continuous Power Dissipation Both Sides
Maximum Current
Drain to Source
2
Maximum Voltages
Drain to Gate
2
Drain to Source
Gate to Gate
2
2,3
1
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
I
GSS
鈮?/div>
鹵10pA
C
rss
鈮?/div>
1.0pF
TO-78
BOTTOM VIEW
C
-65 to +150 擄C
-55 to +135 擄C
300mW
525mW
50mA
30V
30V
鹵125V
鹵80V
G1
S1
D1
2
4
3
5
6
1
7
G2
S2
D2
Transient Gate to Source
MATCHING CHARACTERISTICS @ 25 擄C (unless otherwise stated) (V
BS
= 0V unless otherwise stated)
SYMBOL
g
fs1
g
fs2
CHARACTERISTIC
Forward Transconductance Ratio
Gate to Source Threshold Voltage
Differential
Gate to Source Threshold Voltage
4
Differential with Temperature
Gate to Source Threshold Voltage
Differential with Temperature
4
MIN
0.85
TYP
MAX UNITS
1.0
100
100
碌V
擄
C
CONDITIONS
V
DS
= -15V, I
D
= -500碌A(chǔ),
f
= 1kHz
V
DS
= -15V, I
D
= -500碌A(chǔ)
V
DS
= -15V, I
D
= -500碌A(chǔ)
T
S
= -55 TO +25 擄C
V
DS
= -15V, I
D
= -500碌A(chǔ)
T
S
= +25 TO +125 擄C
V
GS1-2
鈭哣
GS1
鈭?/div>
2
鈭員
鈭哣
GS1
鈭?/div>
2
鈭員
mV
100
ELECTRICAL CHARACTERISTICS @ 25 擄C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
BV
DSS
BV
SDS
V
GS
V
GS(th)
I
GSSR
I
GSSF
I
DSS
I
SDS
I
D(on)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Source to Drain Breakdown Voltage
Gate to Source Voltage
Gate to Source Threshold Voltage
Reverse Gate Leakage Current
Forward Gate Leakage Current
Drain Leakage Current "Off"
Source to Drain Leakage Current "Off"
Drain Current "On"
-5.0
MIN
-40
-40
-3.0
-2.0
-2.0
-6.5
-5.0
-5.0
10
-10
-200
-400
-30.0
mA
pA
V
TYP
MAX UNITS
CONDITIONS
I
D
= -10碌A(chǔ)
I
S
= -10碌A(chǔ), V
BD
= 0V
V
DS
= -15V, I
D
= -500碌A(chǔ)
V
DS
= V
GS
, I
D
= -10碌A(chǔ)
V
DS
= -15V, I
D
= -500碌A(chǔ)
V
GS
= 40V
V
GS
= -40V
V
DS
= -15V
V
SD
= -15V, V
DB
= 0V
V
DS
= -15V, V
GS
= -10V
Linear Integrated Systems
鈥?4042 Clipper Court 鈥?Fremont, CA 94538 鈥?Tel: 510 490-9160 鈥?Fax: 510 353-0261

3N190相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    DUAL P CHANNEL ENHANCEMENT MODE MOSFET
    INTERSIL
  • 英文版
    Dual P-Channel Enhancement Mode MOSFET General Purpose Ampli...
    CALOGIC
  • 英文版
    P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
    LINEAR
  • 英文版
    P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
    LINEAR [Li...
  • 英文版
    Dual P-Channel Enhancement Mode MOSFET General Purpose Ampli...
    CALOGIC [C...
  • 英文版
    DUAL P CHANNEL ENHANCEMENT MODE MOSFET
    INTERSIL [...
  • 英文版
    Dual P-Channel Enhancement Mode MOSFET General Purpose Ampli...
    CALOGIC
  • 英文版
    P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
    LINEAR
  • 英文版
    DUAL P CHANNEL ENHANCEMENT MODE MOSFET
    INTERSIL
  • 英文版
    P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
    LINEAR [Li...
  • 英文版
    Dual P-Channel Enhancement Mode MOSFET General Purpose Ampli...
    CALOGIC [C...
  • 英文版
    DUAL P CHANNEL ENHANCEMENT MODE MOSFET
    INTERSIL [...
  • 英文版
    P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
    LINEAR
  • 英文版
    P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
    LINEAR [Li...
  • 英文版
    Dual P-Channel Enhancement Mode MOSFET General Purpose Ampli...
    CALOGIC
  • 英文版
    Dual P-Channel Enhancement Mode MOSFET General Purpose Ampli...
    CALOGIC [C...

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