鈮?/div>
3.0ns
N-CHANNEL MOSFET
ENHANCEMENT MODE
TO-72
BOTTOM VIEW
G
2
3
D
S
1
4
C
ELECTRICAL CHARACTERISTICS @ 25 擄C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
BV
DSS
V
DS(on)
V
GS(th)
I
GSS
I
DSS
I
D(on)
g
fs
r
ds(on)
C
rss
C
iss
C
db
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
Gate to Source
Threshold Voltage
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
10
1000
200
1.3
5.0
5.0
pF
3N170
3N171
1.0
1.5
MIN
25
2.0
2.0
2.0
10
10
pA
nA
mA
碌S
鈩?/div>
V
TYP
MAX UNITS
CONDITIONS
I
D
= 10碌A(chǔ), V
GS
= 0V
I
D
= 10mA, V
GS
= 10V
V
DS
= 10V, I
D
= 10碌A(chǔ)
V
GS
= -35V, V
DS
= 0V
V
DS
= 10V, V
GS
= 0V
V
GS
= 10V, V
DS
= 10V
V
DS
= 10V, I
D
= 2.0mA,
f
= 1.0kHz
V
GS
= 10V, I
D
= 0A,
f
= 1.0kHz
V
DS
= 0V, V
GS
= 0V,
f
= 1.0MHz
V
DS
= 10V, V
GS
= 0V,
f
= 1.0MHz
V
DB
= 10V,
f
= 1.0MHz
Linear Integrated Systems
鈥?4042 Clipper Court 鈥?Fremont, CA 94538 鈥?Tel: 510 490-9160 鈥?Fax: 510 353-0261
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