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3CN00397KF Datasheet

  • 3CN00397KF

  • Optoelectronic

  • 63.23KB

  • 2頁

  • ETC

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Alcatel 1916 LMM
12800 ps/nm WDM 2.5 Gbit/s digital Laser Module
with integrated electro-absorption Modulator
Description
This Alcatel 1916 LMM contains an Alcatel
DFB laser with monolithically integrated
electro-absorption modulator (ILM). This
chip provides much lower dispersion
penalties than a directly modulated DFB,
without the complexity of LiNbO3 external
modulators. The Alcatel 1916 LMM is
optimized for ultra long-haul transmission
systems using non-dispersion shifted and
optical fiber amplifiers.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Wavelength selection according to ITU-T G.692
Industry-standard 14-pin butterfly package
High frequency butterfly package with
50
鈩?/div>
RF impedance
Low drive voltage (鈮?2 Vpp)
InGaAsP monolithically integrated DFB laser and
modulator chip
Internal optical isolator
STM-16 and OC-48 ultra long-haul
transmission systems
Terminals for submarine transmission systems
Digital WDM CATV transmission
Applications
鈥?/div>
鈥?/div>
鈥?/div>
Very low dispersion penalty over 750 km
of fiber for 2.5 Gbit/s operation
Optical characteristics
Parameter
Threshold current
Operating current
Optical output power
Laser forward voltage
Emission wavelength
鈭?emitted-target)
wavelength
Laser chip temperature range for tunability
Modulator bias voltage
Modulator drive voltage
Dynamic extinction ratio
Side mode suppression
Cut off frequency
RF return loss
Dispersion penalty
Tracking error
Rise time / Fall time
Wavelength drift vs Tcase
Monitor diode current
Dark current
TEC current
TEC voltage
Thermistor resistance
Notes :
Symb.
I
th
Iop
P
AVE
V
F
位m
鈭單籩
T位
V
bias
V
mod
DER
SMSR
S21
S11
鈭唖
TR
Tr/Tf
鈭單?鈭員c
I
m
I
d
I
t
V
t
R
TH
Conditions
CW, V
bias
= 0 V
CW, V
bias
= 0 V
I
op
, V
mod
, [1]
CW, I
op
, V
bias
= 0 V
See [3]
See [3]
See [1]
See [1]
See [1]
@ I
op
- 3 dB
DC to 3 GHz
See [1], [2], [3]
Tsubmount=25擄C,Tcase=65擄C
If=100mA,Q=10log[P(65擄C)/P(25擄C)]
Min
5
60
0
Typical
17
Max
35
80
2
See table 1
- 0.1
20
-1
10
35
4
10
- 0.5
0.2
0.5
2
0.5
140
0.5
1.5
0.1
1.3
2.5
10.5
+ 0.1
30
0
2
Units
mA
mA
dBm
V
nm
nm
擄C
V
V
dB
dB
GHz
dB
dB
dB
ps
pm/擄C
mA
碌A(chǔ)
A
V
K鈩?/div>
See [1], [2], 10%, 90%
I
op,
VM = - 5 V
鈭員=
45擄C,I
op
=100mA,T
C
=65擄C,V
bias
=-1V
鈭員=
45擄C,I
op
=100mA,T
C
=65擄C,V
bias
=-1V
0.2
9.5
All limits start of life Tcase = 25 擄C, Tsubmount = 20 擄C to 30 擄C, Vr = - 5 V, unless otherwise stated.
[1]BER=10
-10
;2.488Gbit/smodulation;2
23
-1PRBS;NZRlinecode;DER
鈮?/div>
10dB
[2]7200ps/nmdispersion,assumingfiberwithanaveragedispersionof18ps/nm/km
[4]Tsubmount=T位.T位ischiptemperaturerequiredtomeettargetwavelength(seetable1)
[3] 12800ps/nmdispersion,assumingfiberwithanaveragedispersionof18ps/nm/km
Absolute maximum ratings
Parameters
Min
Max
Operating case temperature
0
65
Storage temperature
-40
85
Laser forward current
150
Laser reverse voltage
2
Modulator forward voltage
1
Modulator reverse voltage
5
Photodiode forward current
1
Photodiode reverse voltage
20
TEC Voltage
2.8
TEC Current
1.4
ESD applied on modulator
500
ESD applied on laser [1]
2000
Lead soldering time (at 260擄C)
10
Packing Mounting Screw Torque
0.2
[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Unit
擄C
擄C
mA
V
V
V
mA
V
V
A
V
V
s
nm

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