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3CN00307AA Datasheet

  • 3CN00307AA

  • Optoelectronic

  • 2頁

  • ETC

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Alcatel 1916 LMM
2.5 Gbit/s digital Laser Module with
integrated electro-absorption Modulator
Description
This Alcatel 1916 LMM contains an Alcatel
DFB laser with monolithically integrated
electro-absorption modulator (ILM). This
chip provides much lower dispersion
penalties than a directly modulated DFB,
without the complexity of LiNbO3 external
modulators. The Alcatel 1916 LMM is
optimized for ultra long-haul transmission
systems using non-dispersion shifted and
optical fiber amplifiers.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Very low dispersion penalty over 750km for
2.5 Gbit/s operation
InGaAsP monolithically integrated DFB laser and
modulator chip
High frequency butterfly package with
50
鈩?/div>
RF impedance matching and DC bias RF
filtering
Low drive voltage (鈮?2 Vpp)
Internal optical isolator
High power available
STM-16 and OC-48 ultra long-haul
transmission systems
Terminals for submarine transmission systems
Applications
鈥?/div>
鈥?/div>
Industry-standard 14-pin butterfly package
Optical characteristics
Parameter
Threshold current
Operating current
Optical output power
Laser forward voltage
Modulator bias voltage
Modulator drive voltage
Dynamic extinction ratio
Emission wavelength
Side mode suppression
Cut off frequency
RF return loss
Dispersion penalty
Tracking error
Symb.
I
th
Iop
P
AVE
V
F
V
bias
V
mod
DER
位m
SMSR
S21
S11
鈭唖
TR
Conditions
CW, V
bias
= 0 V
CW, V
bias
= 0 V
I
op
, V
mod
, [1]
CW, I
op
, V
bias
= 0 V
See [1]
See [1]
See [1]
@ I
op
- 3 dB
DC to 3 GHz
See [1], [2]
Tsubmount = 25 擄C, Tcase = 70擄C
If = 100 mA, Q = 10 log [P(70 擄C)/P(25 擄C)]
Min
5
50
0
-2
10
1530
35
4
10
- 0.5
Typical
17
80
Max
35
100
2
0
2
1570
-1
1
11
2
0.5
Units
mA
mA
dBm
V
V
V
dB
nm
dB
GHz
dB
dB
dB
Rise time / Fall time
Tr/Tf
[1], 10%, 90%
70
125
ps
Optical return loss
Ol
Tc = - 5 to 70 擄C
25
dB
Monitor diode current
I
m
I
op,
VM = - 5 V
0.2
0.5
1.5
mA
Dark current
I
d
0.1
碌A
鈭員=
45 擄C, I
op
= 120 mA, T
C
= 70 擄C, V
bias
= - 1 V
TEC current
I
t
1
1.2
A
鈭員=
45 擄C, I
op
= 120 mA, T
C
= 70 擄C, V
bias
= - 1 V
TEC voltage
V
t
1.6
2.4
V
Thermistor resistance
R
TH
9.5
10.5
K鈩?/div>
Notes : All limits start of life, Tcase = 25 擄C, Tsubmount = 25 擄C, monitor bias = - 5 V, unless otherwise stated.
[1] BER = 10
-10
; 2.488 Gbit/s modulation; 2
23
-1 PRBS; NZR line code; DER鈮?0dB
[2] 7200 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km
Absolute maximum ratings
Parameters
Min
Max
Operating case temperature
-5
70
Storage temperature
-40
85
Laser forward current
150
Laser reverse voltage
2
Modulator forward voltage
1
Modulator reverse voltage
5
Photodiode forward current
1
Photodiode reverse voltage
20
TEC Voltage
2.8
TEC Current
1.4
ESD applied on modulator
500
ESD applied on laser [1]
2000
Lead soldering time (at 260擄C)
10
Packing Mounting Screw Torque
0.2
[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Unit
擄C
擄C
mA
V
V
V
mA
V
V
A
V
V
s
nm

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