Silicon MOS FETs (Small Signal)
2SK0664
(2SK664)
Silicon N-Channel MOS FET
unit: mm
For switching
I
Features
(0.425)
0.3
+0.1
鈥?.0
3
0.15
+0.10
鈥?.05
1.25
鹵0.10
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.2
10擄
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
50
8
100
200
150
150
鈭?5
to +150
V
V
mA
mA
mW
擄C
擄C
1: Gate
2: Source
3: Drain
0 to 0.1
Parameter
Symbol
V
DSS
Ratings
Unit
0.9
鹵0.1
0.9
+0.2
鈥?.1
I
Absolute Maximum Ratings
(Ta = 25擄C)
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 3N
Internal Connection
D
G
S
I
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100碌A(chǔ), V
GS
= 0
I
D
= 100碌A(chǔ), V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200鈩?/div>
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200鈩?/div>
10
20
min
typ
max
10
50
50
1.5
20
15
5
1
3.5
50
Unit
碌A(chǔ)
碌A(chǔ)
V
V
鈩?/div>
mS
pF
pF
pF
ns
ns
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
fs
|
Input capacitance (Common Source) C
iss
Output capacitance (Common Source) C
oss
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
t
on*
Turn-off time
*
t
off*
V
out
t
on
, t
off
measurement circuit
200鈩?/div>
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
90%
50鈩?/div>
100碌F
V
GS
= 5V
Note) The part number in the parenthesis shows conventional part number.
0.2
鹵0.1
G
High-speed switching
G
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
2.1
鹵0.1
5擄
1
2
289
2SK664相關(guān)型號(hào)PDF文件下載
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