Silicon MOS FETs (Small Signal)
2SK620
Silicon N-Channel MOS FET
For switching
2.8
鈥?.3
+0.2
unit: mm
0.65鹵0.15
s
Features
q
High-speed switching
q
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
0.65鹵0.15
1.5
鈥?.05
+0.25
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
0.4
鈥?.05
+0.1
2
1.45
1.1
鈥?.1
+0.2
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
150
150
鈭?5
to +150
Unit
V
V
mA
mA
mW
擄C
擄C
1: Gate
2: Source
3: Drain
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol: 3N
Internal Connection
D
G
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.8
S
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100碌A(chǔ), V
GS
= 0
I
D
= 100碌A(chǔ), V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200鈩?/div>
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200鈩?/div>
10
20
min
typ
max
10
50
50
1.5
20
30
15
5
1
3.5
50
Unit
碌A(chǔ)
nA
V
V
鈩?/div>
mS
pF
pF
pF
ns
ns
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
fs
|
Input capacitance (Common Source) C
iss
Output capacitance (Common Source) C
oss
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
t
on*
Turn-off time
*
t
off
V
out
*
t
on
, t
off
measurement circuit
200鈩?/div>
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
90%
50鈩?/div>
100碌F
V
GS
= 5V
0.16
鈥?.06
+0.1
1
2SK620相關(guān)型號PDF文件下載
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