鈥?/div>
Package Dimensions
unit : mm
2040A
4.0
Low noise : NF=1.8dB typ (f=100MHz).
High power gain : PG=27dB typ (f=100MHz).
Small reverse transfer capacitance : Crss=0.035pF
(VDS=10V, f=1MHz).
[2SK544]
2.2
0.4
0.5
0.6
1.8
15.0
0.4
3.0
0.4
1 2
1.3
0.7
3
1.3
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
Tch
Tstg
Conditions
1 : Drain
2 : Source
3 : Gate
SANYO : SPA
Ratings
20
鹵5
30
300
125
--55 to +150
Unit
V
V
mA
mW
擄C
擄C
3.0
3.8nom
Electrical Characteristics
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Rank
IDSS
Symbol
VDSX
IGSS
Conditions
VGS= --4V, ID=100碌A(chǔ)
VDS=0, VGS=鹵5V
VDS=10V, VGS=0
VDS=10V, ID=100碌A(chǔ)
Ratings
min
20
10
1.2*
12*
--2.5
typ
max
Unit
V
nA
mA
V
IDSS*
VGS(off)
* : The 2SK544 is classified by IDSS as follows (unit : mA) :
D
1.2 to 3.0
E
2.5 to 6.0
F
5.0 to 12
0.7
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM / 42899 TH (KT) / 6037 TA / 2075 KI, TS No.1792-1/5
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