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2SK4178-ZK-E1-AY Datasheet

  • 2SK4178-ZK-E1-AY

  • MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FE...

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  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4178
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 9.0 m惟 MAX. (V
GS
= 10 V, I
D
= 30 A)
鈥?/div>
Low gate to drain charge
Q
GD
= 3.7 nC TYP. (V
DD
= 15 V, I
D
= 30 A)
鈥?/div>
4.5 V drive available
ORDERING INFORMATION
PART NUMBER
2SK4178(1)-S27-AY
2SK4178-ZK-E1-AY
2SK4178-ZK-E2-AY
Note
Note
Note
LEAD PLATING
PACKING
Tube 75 p/tube
PACKAGE
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
Pure Sn (Tin)
Tape 2500 p/reel
Note
Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
(TO-251)
30
鹵20
鹵48
鹵144
33
1.0
150
鈭?5
to
+150
23
52.9
V
V
A
A
W
W
擄C
擄C
A
mJ
(TO-252)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
渭
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
= 15 V, R
G
= 25
惟,
V
GS
= 20
鈫?/div>
0 V, L = 0.1 mH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19080EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007

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