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2SK4082-S17-AY Datasheet

  • 2SK4082-S17-AY

  • SWITCHING N-CHANNEL POWER MOS FET

  • 182.95KB

  • 7頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4082
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)
= 2.2
惟
MAX. (V
GS
= 10 V, I
D
= 1.8 A)
鈥?/div>
Low gate charge
Q
G
= 13 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 3.5 A)
鈥?/div>
Gate voltage rating:
鹵30
V
鈥?/div>
Avalanche capability ratings
(Isolated TO-220)
ORDERING INFORMATION
PART NUMBER
2SK4082-S17-AY
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 50 p/tube
PACKAGE
Isolated TO-220 (MP-45F) typ. 2.2 g
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
鹵30
鹵3.5
鹵14
35
2.0
150
鈭?5
to
+150
2
240
V
V
A
A
W
W
擄C
擄C
A
mJ
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
渭
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
= 150 V, R
G
= 25
惟,
V
GS
= 20
鈫?/div>
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18786EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007

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