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2SK4078-ZK-E2-AY Datasheet

  • 2SK4078-ZK-E2-AY

  • SWITCHING N-CHANNEL POWER MOS FET

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4078
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK4078-ZK-E1-AY
2SK4078-ZK-E2-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
Note
Pb-free (This product does not contain Pb in external electrode.)
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 8.5 m惟 MAX. (V
GS
= 10 V, I
D
= 25 A)
R
DS(on)2
= 14.0 m惟 MAX. (V
GS
= 4.5 V, I
D
= 13 A)
鈥?/div>
Low input capacitance
C
iss
= 2300 pF TYP.
鈥?/div>
Logic level drive type
(TO-252)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
40
鹵20
鹵50
鹵150
45
1.0
150
鈭?5
to
+150
23
52
V
V
A
A
W
W
擄C
擄C
A
mJ
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
渭
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
=
25擄C, V
DD
= 20 V, R
G
= 25
惟,
V
GS
= 20
鈫?/div>
0 V, L = 100
渭
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
2.77
125
擄C/W
擄C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18885EJ1V0DS00 (1st edition)
Date Published July 2007 NS
Printed in Japan
2007

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