2SK3611-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25擄C
Tc=25擄C
T
ch
T
stg
VISO
Ratings
250
220
鹵10
鹵40
鹵30
10
182
20
5
2.16
25
+150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
kV/碌s
kV/碌s
W
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
擄C
擄C
kVrms
*1 L=3.05mH, Vcc=48V *2 Tch <150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C
=
=
=
=
*4 V
DS
< 250V
*5 V
GS
=-30V *6 t=60sec f=60Hz
=
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A(chǔ)
V
GS
=0V
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=5A V
GS
=10V
I
D
=5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=5A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=125V
I
D
=10A
V
GS
=10V
L=100碌H T
ch
=25擄C
I
F
=10A V
GS
=0V T
ch
=25擄C
I
F
=10A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
T
ch
=25擄C
T
ch
=125擄C
10
200
10
785
88
4
12
2.7
22
7.4
21
8
5
1.10
0.155
1.05
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
260
1178
132
6
18
4.1
33
11.1
31.5
12
7.5
1.65
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
5
ns
nC
10
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
5.0
58.0
Units
擄C/W
擄C/W
www.fujielectric.co.jp/denshi/scd
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