2SK3591-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25擄C
Tc=25擄C
T
ch
T
stg
V
ISO
Ratings
150
120
鹵40
鹵160
鹵30
40
387
20
5
2.16
70
+150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
kV/碌s
kV/碌s
W
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
擄C
擄C
*6
kVrms
*1 L=335碌H, Vcc=48V
*2 Tch< 150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C
=
=
=
=
< 150V *5 V
GS
=-30V *6 t=60sec f=60Hz
*4 V
DS
=
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
V
GS
=0V
I
D
= 250碌A(chǔ)
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=150V V
GS
=0V
V
DS
=120V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=20A V
GS
=10V
I
D
=20A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=20A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=75V
I
D
=40A
V
GS
=10V
L=100碌H T
ch
=25擄C
I
F
=40A V
GS
=0V T
ch
=25擄C
I
F
=40A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
T
ch
=25擄C
T
ch
=125擄C
10
31
26
1940
310
24
20
26
50
20
52
15
18
1.10
0.14
0.77
Min.
150
3.0
Typ.
Max.
5.0
25
250
100
41
2910
465
36
30
39
75
30
78
22.5
27
1.65
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
13
ns
nC
40
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.786
58.0
Units
擄C/W
擄C/W
www.fujielectric.co.jp/denshi/scd
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