2SK3556-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25擄C
Tc=25擄C
T
ch
T
stg
Ratings
250
220
鹵25
鹵100
鹵30
25
372
20
5
2.02
135
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/碌s
kV/碌s
W
擄C
擄C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
<
<
<
*1 L=0.67mH, Vcc=48V *2 Tch=150擄C *3 I
F
<
D
, -di/dt=50A/碌s, Vcc=BV
DSS
, Tch=150擄C
=-I
*4 V
DS
<250V *5 V
GS
=-30V *6 t=60sec f=60Hz
=
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
V
GS
=0V
I
D
=250碌A(chǔ)
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=250V
V
DS
=200V
V
GS
=鹵30V
I
D
=12.5A
I
D
=12.5A
V
DS
=75V
V
GS
=0V
f=1MHz
V
GS
=0V
V
GS
=0V
V
DS
=0V
V
GS
=10V
V
DS
=25V
8
T
ch
=25擄C
T
ch
=125擄C
10
75
16
2000
220
15
20
30
60
20
44
14
16
25
1.10
0.45
1.5
1.65
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
100
3000
330
30
30
45
90
30
66
21
24
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=72V
I
D
=12A
V
GS
=10V
L=100碌H T
ch
=25擄C
I
F
=25A V
GS
=0V T
ch
=25擄C
I
F
=25A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
ns
nC
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
62.0
Units
擄C/W
擄C/W
1
1
2
3
4
