鈥?/div>
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
1.25
83.3
Unit
擄C/W
擄C/W
Note 1: Please use device on condition that the channel temperature is
below 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C (initial), L
=
3.46 mH, R
G
=
25
W,
I
AR
=
13 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-10S2B
Weight: 1.5 g (typ.)
1
2002-09-02
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