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2SK3322-S Datasheet

  • 2SK3322-S

  • SWITCHING N-CHANNEL POWER MOSFET

  • 91.63KB

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, and designed for high voltage
applications such as switching power supply, AC
adapter.
鈽?/div>
ORDERING INFORMATION
PART NUMBER
2SK3322
2SK3322-S
2SK3322-ZJ
2SK3322-ZK
PACKAGE
TO-220AB (MP-25)
TO-262
TO-263(MP-25ZJ)
TO-263(MP-25ZK)
FEATURES
鈽?/div>
鈥?/div>
Low gate charge :
Q
G
= 15 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 5.5 A)
鈥?/div>
Gate voltage rating :
鹵30
V
鈥?/div>
Low on-state resistance :
R
DS(on)
= 2.2
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 2.8 A)
鈥?/div>
Avalanche capability ratings
鈥?/div>
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
鹵30
鹵5.5
鹵20
1.5
65
150
鈭?5
to +150
4.0
10.7
V
V
A
A
W
W
擄C
擄C
A
mJ
Total Power Dissipation (T
A
= 25擄C)
Total Power Dissipation (T
C
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
= 150 V, R
G
= 25
鈩?
V
GS
= 20
鈫?/div>
0 V
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
Not all products and/or types are availabe in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14114EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark
鈽?/div>
shows major revised points.
1999, 2000

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