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2SK2414-Z Datasheet

  • 2SK2414-Z

  • MOS Field Effect Transistor

  • 110.52KB

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2414, 2SK2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
6.5 鹵0.2
FEATURES
1.6 鹵0.2
5.0 鹵0.2
4
1.5
鈥?.1
+0.2
2.3 鹵0.2
0.5 鹵0.1
R
DS(on)1
= 70 m鈩?MAX. (@ V
GS
= 10 V, I
D
= 5.0 A)
R
DS(on)2
= 95 m鈩?MAX. (@ V
GS
= 4 V, I
D
= 5.0 A)
1
2 3
鈥?/div>
Low C
iss
C
iss
= 840 pF TYP.
鈥?/div>
Built-in G-S Gate Protection Diodes
鈥?/div>
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
1.3
MAX.
7.0
MIN.
5.5 鹵0.2
13.7
MIN.
鈥?/div>
Low On-Resistance
0.6 鹵0.1
2.3 2.3
0.6 鹵0.1
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
MP-3
1.5
鈥?.1
+0.2
0.75
6.5 鹵0.2
5.0 鹵0.2
2.3 鹵0.2
0.5 鹵0.1
0.8 4.3
MAX.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 藲C)
Total Power Dissipation (T
A
= 25 藲C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
鹵20
鹵10
鹵40
20
1.0
150
10
10
V
V
A
A
W
W
擄C
A
mJ
12.0
1.3
MAX.
0.9 0.8
2.3 2.3
MAX. MAX.
0.8
MIN.
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
MP-3Z (SURFACE MOUNT TYPE)
Drain
鈥?5 to +150
擄C
Gate
Body
Diode
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
漏
0.5
1 2
3
5.5 鹵0.2
10.0 MAX.
4
1.0
MIN.
1.5
TYP.
1994

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