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2SK2411-Z Datasheet

  • 2SK2411-Z

  • TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | ...

  • 8頁

  • ETC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed
for high speed switching applications.
3.0 鹵0.3
PACKAGE DIMENSIONS
(in millimeter)
10.6
MAX.
10.0
5.9
MIN.
12.7
MIN.
15.5
MAX.
3.6 鹵0.2
4.8
MAX.
1.3 鹵0.2
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)1
= 40 m鈩?MAX. (@ V
GS
= 10 V, I
D
= 15 A)
R
DS(on)2
= 60 m鈩?MAX. (@ V
GS
= 4 V, I
D
= 15 A)
4
1.3 鹵0.2
0.75 鹵0.1
2.54
1 2 3
鈥?/div>
Low C
iss
C
iss
= 1500 pF TYP.
鈥?/div>
Built-in G-S Gate Protection Diodes
鈥?/div>
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
6.0
MAX.
0.5 鹵0.2
2.8 鹵0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8
MAX.
8.5 鹵0.2
1.3 鹵0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 藲C)
Total Power Dissipation (T
A
= 25 藲C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
鹵20
鹵30
鹵120
75
1.5
150
30
90
V
V
A
A
W
擄C
A
mJ
W
1.0
鹵
0.5
1.5
MAX.
1.4 鹵0.2
1.0 鹵0.3
(2.54) (2.54)
1 2 3
1.1 鹵0.4
3.0 鹵0.5
R)
.5 )
(0 .8R
(0
0.5 鹵0.2
鈥?5 to +150
擄C
MP-25Z(SURFACE MOUNT TYPE)
Drain
2.8 鹵0.2
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13398EJ1V0DS00 (1st edition)
(Previous No. TC-2492)
Date Published March 1998 N CP(K)
Printed in Japan
漏
1994

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