Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
0.4
unit: mm
1.6鹵0.15
0.8鹵0.1
0.4
q
Low gate to source leakage current, I
GSS
q
Small capacitance of C
iss
, C
oss
, C
rss
q
SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
0.45鹵0.1 0.3
0.75鹵0.15
Parameter
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDO
V
GSO
I
D
I
G
P
D
T
ch
T
stg
Ratings
鈭?0
鈭?0
鹵1
10
125
125
鈭?5
to +125
Unit
V
V
mA
mA
mW
擄C
擄C
1: Source
2: Drain
3: Gate
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol (Example): EB
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Symbol
I
DSS*
I
GSS
V
DS
V
GSC
| Y
fs
|
C
oss
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
鈭?0V,
V
DS
= 0
I
G
=
鈭?0碌A,
V
DS
= 0
V
DS
= 10V, I
D
= 1碌A
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
0.05
1
0.4
0.4
鈭?0
鈭?.3
鈭?
min
50
typ
max
200
鈭?/div>
0.5
Unit
碌A
nA
V
V
mS
pF
pF
pF
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
*
I
DSS
rank classification
Runk
I
DSS
(mA)
Q
50 to 100
EBQ
R
70 to 130
EBR
S
100 to 200
EBS
Marking Symbol
0 to 0.1
0.2鹵0.1
0.15
鈥?.05
+0.1
s
Absolute Maximum Ratings
(Ta = 25擄C)
0.2
鈥?.05
+0.1
s
Features
1
1
2
