Silicon Junction FETs (Small Signal)
2SK1104
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ164
s
Features
q
Low ON-resistance
q
Low-noise characteristics
unit: mm
4.0鹵0.2
3.0鹵0.2
0.7鹵0.1
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
鈭?5
20
10
300
150
鈭?5
to +150
Unit
V
mA
mA
mW
擄C
擄C
1.27 1.27
1
2
3
2.0鹵0.2
marking
1: Source
2: Gate
2.54鹵0.15
3: Drain
EIAJ: SC-72
New S Type Package
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
oss
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
鈭?0V,
V
DS
= 0
I
G
=
鈭?0碌A,
V
DS
= 0
V
DS
= 10V, I
D
= 10碌A
V
DS
= 10V, I
D
= 1mA, f = 1kHz
V
DS
= 10mV, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
1.8
鈭?5
鈭?.5
2.5
250
7
1.3
1.5
鈭?.5
min
0.2
typ
max
6
鈭?0
Unit
mA
nA
V
V
mS
鈩?/div>
pF
pF
pF
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
*
I
DSS
rank classification
Runk
I
DSS
(mA)
O
0.2 to 1
P
0.6 to 1.5
Q
1 to 3
R
2.5 to 6
+0.2
0.45鈥?.1
15.6鹵0.5
1
1
2
3
