Silicon Junction FETs (Small Signal)
2SK0301
(2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
5.0鹵0.2
5.1鹵0.2
4.0鹵0.2
unit: mm
I
Features
13.5鹵0.5
G
Low noies, high gain
G
High gate to drain voltage V
GDO
0.45
鈥?.1
+0.2
0.45
鈥?.1
+0.2
I
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
鈭?5
鈭?5
鹵30
10
250
125
鈭?5
to +125
Unit
V
V
V
mA
mA
mW
擄C
擄C
1.27
1.27
1 2 3
2.54鹵0.15
I
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Symbol
I
DSS*
I
GSS
V
GDC
V
GSC
g
m
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
鈭?0V,
V
DS
= 0
I
G
=
鈭?00碌A(chǔ),
V
DS
= 0
V
DS
= 10V, I
D
= 10碌A(chǔ)
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100k鈩?/div>
f = 100Hz
2.5
7.5
6.5
1.9
0.5
鈭?5
鈭?0
鈭?
min
1
typ
max
20
鈭?0
Unit
mA
nA
V
V
mS
pF
pF
dB
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NF
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
1 to 3
Q
2 to 6.5
R
5 to 12
S
10 to 20
Note) The part number in the parenthesis shows conventional part number.
2.3鹵0.2
1: Drain
2: Gate
3: Source
JEDEC: TO-92
EIAJ: SC-43
TO-92 Type Package
247
1
2
3
