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2SJ687-ZK-E1-AY Datasheet

  • 2SJ687-ZK-E1-AY

  • MOS FIELD EFFECT TRANSISTOR

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 7.0 m惟 MAX. (V
GS
=
鈭?.5
V, I
D
=
鈭?0
A)
R
DS(on)2
= 9.0 m惟 MAX. (V
GS
=
鈭?.0
V, I
D
=
鈭?0
A)
R
DS(on)3
= 20 m惟 MAX. (V
GS
=
鈭?.5
V, I
D
=
鈭?0
A)
鈥?/div>
2.5 V drive available
鈥?/div>
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SJ687-ZK-E1-AY
2SJ687-ZK-E2-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
0.27 g TYP.
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
(TO-252)
鈭?0
m12
m20
m60
36
1.0
150
鈭?5
to
+150
鈭?0
40
V
V
A
A
W
W
擄C
擄C
A
mJ
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
渭
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
=
鈭?0
V, R
G
= 25
惟,
V
GS
=
鈭?2 鈫?/div>
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2SJ687-ZK-E1-AY 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門

  • 20V

  • 20A

  • 7 毫歐 @ 10A，4.5V

  • -

  • 57nC @ 4.5V

  • 4400pF @ 10V

  • 1W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • TO-252（MP-3ZK）

  • 帶卷 (TR)

  • 2SJ687-ZK-E1-AY-ND2SJ687-ZK-E1-AYTR

2SJ687-ZK-E1-AY相關(guān)型號(hào)PDF文件下載

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