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2SJ598-Z Datasheet

  • 2SJ598-Z

  • SWITCHING P-CHANNEL POWER MOS FET

  • 154.39KB

  • 8頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
2SJ598
2SJ598-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
鈥?/div>
Low on-state resistance:
R
DS(on)1
= 130 m鈩?MAX. (V
GS
= 鈥?0 V, I
D
= 鈥? A)
R
DS(on)2
= 190 m鈩?MAX. (V
GS
= 鈥?.0 V, I
D
= 鈥? A)
鈥?/div>
Low C
iss
: C
iss
= 720 pF TYP.
鈥?/div>
Built-in gate protection diode
鈥?/div>
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
(TO-251)
鈥?0
m20
m12
m30
23
1.0
150
鈥?5 to +150
鈥?2
14.4
V
V
A
A
W
W
擄C
擄C
A
mJ
(TO-252)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
= 鈥?0 V, R
G
= 25
鈩?
V
GS
= 鈥?0
鈫?/div>
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2000, 2001

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