Transistor
2SD973, 2SD973A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9鹵0.1
0.4
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
Features
q
q
1.5
1.0鹵0.1
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(Ta=25藲C)
Ratings
30
60
25
50
5
1.5
1
1
150
鈥?5 ~ +150
Unit
V
1.5 R0.9
R0.9
R
0.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD973
2SD973A
2SD973
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
V
CBO
Symbol
0.85
0.55鹵0.1
1.25鹵0.05
0.45鹵0.05
3
2
1
emitter voltage 2SD973A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
V
2.5
2.5
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?1
M Type Mold Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD973
2SD973A
2SD973
2SD973A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
V
CE
= 5V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
=
50mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0. f = 1MHz
30
60
25
50
5
85
50
160
100
0.2
0.85
200
11
*2
min
typ
max
0.1
4.1鹵0.2
4.5鹵0.1
7
Unit
碌A(chǔ)
V
V
V
340
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
FE1
Rank classification
0.4
1.2
V
V
MHz
20
pF
Pulse measurement
Rank
h
FE1
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
1
1
2
3
