Transistor
2SD0965
(2SD965)
Silicon NPN epitaxial planer type
For low-frequency power amplification
For stroboscope
5.0鹵0.2
Unit: mm
4.0鹵0.2
G
G
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
40
20
7
8
5
0.75
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
2.54鹵0.15
1 2 3
0.45
鈥?.1
1.27
+0.2
13.5鹵0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
5.1鹵0.2
I
Features
0.45
鈥?.1
1.27
+0.2
2.3鹵0.2
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
I
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
*2
min
typ
max
0.1
1.0
0.1
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
V
20
7
230
150
1
150
50
600
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
230 ~ 380
R
340 ~ 600
Rank
h
FE1
Note.) The Part number in the Parenthesis shows conventional part number.
1
1
2
3
