Transistor
2SD0958
(2SD958)
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification
Complementary to 2SB0788 (2SB788)
6.9鹵0.1
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
Unit: mm
I
Features
G
G
G
1.5
0.4
1.5 R0.9
R0.9
0.85
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
120
7
50
20
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
3
2
1
2.5
2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?1
M Type Mold Package
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 5V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 40V, I
C
= 2mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
200
150
120
120
7
180
700
0.6
V
MHz
mV
min
typ
max
100
1
Unit
nA
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
1.25鹵0.05
I
Absolute Maximum Ratings
0.55鹵0.1
0.45鹵0.05
(Ta=25藲C)
4.1鹵0.2
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0鹵0.1
R
0.
7
4.5鹵0.1
1
1
2
3
