Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
Unit: mm
s
Features
q
q
q
2.8
鈥?.3
0.65鹵0.15
+0.2
0.95
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
1.5
鈥?.05
+0.25
0.65鹵0.15
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
3
0.4
鈥?.05
+0.1
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD814
2SD814A
2SD814
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
2
1.45
+0.2
1.1
鈥?.1
Ratings
150
185
150
185
5
100
50
200
150
鈥?5 ~ +150
Unit
V
emitter voltage 2SD814A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
P
(2SD814)
L
(2SD814A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SD814
2SD814A
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
150
2.3
150
150
185
5
90
330
1
V
MHz
pF
mV
min
typ
max
1
Unit
碌A(chǔ)
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
*
h
FE
Rank classification
Rank
h
FE
Q
90 ~ 155
2SD814
2SD814A
PQ
LQ
R
130 ~ 220
PR
LR
S
185 ~ 330
PS
LS
Marking
Symbol
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.8
0.16
鈥?.06
+0.1
1
1
2
