Transistor
2SD0592, 2SD0592A
(2SD592, 2SD592A)
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A)
5.0鹵0.2
Unit: mm
4.0鹵0.2
G
G
Large collector power dissipation P
C
.
Low collector to emitter saturation voltage V
CE(sat)
.
(Ta=25藲C)
Ratings
30
60
25
50
5
1.5
1
750
150
鈥?5 ~ +150
Unit
V
I
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD0592
2SD0592A
2SD0592
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5鹵0.5
5.1鹵0.2
I
Features
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
emitter voltage 2SD0592A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
A
mW
藲C
藲C
2.54鹵0.15
1 2 3
2.3鹵0.2
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD0592
2SD0592A
2SD0592
2SD0592A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
V
CE
= 5V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
*2
min
typ
max
0.1
Unit
碌A(chǔ)
V
30
60
25
50
5
85
50
0.2
0.85
200
20
0.4
1.2
160
340
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Note.) The Part numbers in the Parenthesis show conventional part number.
Rank
h
FE1
1
1
2
3
4
