鈭?/div>
2.5
max
3.0
max
60
typ
55
typ
V
V
MHz
pF
12.0min
4.0max
1.35
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1659)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2589
110
110
5
6
1
50(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=110V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
External Dimensions
FM-25(TO220)
3.0
鹵0.2
10.2
鹵0.2
4.8
鹵0.2
2.0
鹵0.1
Unit
碌
A
碌
A
16.0
鹵0.7
V
8.8
鹵0.2
a
b
酶3.75
鹵0.2
鈭梙
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
0.65
+0.2
-0.1
2.5
B C E
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(鈩?
6
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
5
I
B2
(mA)
鈥?
t
on
(
碌
s)
0.8typ
t
stg
(
碌
s)
6.2typ
t
f
(
碌
s)
1.1typ
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
A
1m
5mA
V
CE
(sa t) 鈥?I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V o l t a ge V
CE (s at)
( V )
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
6
( V C E = 4V )
6
0.
5
mA
0 .4 m A
0. 3m A
C o l l e c t o r Cu r r e n t I
C
( A)
4
0.2m A
C o l l e c t o r C u r r e nt I
C
( A )
2
4
Tem
I
C
= 5A
p)
125藲
I
C
= 3A
I
B
=0.1mA
0
0
2
4
6
0
0.1
0.5
1
5
10
50
100
0
0
1
鈥?0藲C
25藲C
(Case
(Case
2
C (C
1
2
ase
Temp
Temp
)
)
2
2. 5
Co l l ect o r - Em i tte r V ol ta ge V
C E
(V )
Ba s e C ur r en t I
B
( m A)
Ba s e - E m i t t or V o l t a ge V
BE
( V )
h
F E
鈥?I
C
Characteristics
(Typical)
( V C E= 4 V )
40000
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
( VCE= 4V )
40000
Transient Thermal Resistance
胃
j -a
( 藲 C / W )
5
胃
j- a
鈥?t Characteristics
Typ
D C Cu rr en t Ga i n h
F E
DC C ur r e nt Ga i n h
FE
10000
5000
10000
5000
12
5藲C
25
藲C
鈥?
1000
500
0藲C
1
1000
500
200
0.02
0.5
0.4
1
10
10 0
Time t(ms)
1000 2000
0.1
0 .5
1
5 6
100
0.02
0 .1
0.5
1
56
Co l l ect o r Cur ren t I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V C E = 1 2 V )
80
Safe Operating Area
(Single Pulse)
50
Pc 鈥?Ta Derating
Typ
Ma x imu m Po we r D i s s i p a ti o n P
C
(W )
40
W
ith
Cu t-o ff Fre q u e nc y f
T
( M H
Z
)
60
In
fin
30
ite
he
40
at
si
nk
20
20
10
Without Heatsink
0
25
50
75
1 00
12 5
1 50
0
鈥?.02
鈥? . 1
鈥?
鈥?
2
0
Em it t er C urre nt I
E
( A)
A m b i e n t T e m p e r a tu r e T a ( 藲 C )
161
SANKEN
1
