鈭?/div>
2.5
max
3.0
max
70
typ
120
typ
V
V
MHz
pF
20.0min
4.0max
2
3
B
( 7 0
鈩?
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1648)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2561
150
150
5
17
1
200(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Audio, Series Regulator and General Purpose
(Ta=25擄C)
Unit
External Dimensions
MT-200
36.4
鹵0.3
24.4
鹵0.2
2-酶3.2
鹵0.1
9
7
21.4
鹵0.3
2.1
6.0
鹵0.2
碌
A
碌
A
V
a
b
1.05
+0.2
-0.1
5.45
鹵0.1
B
C
E
5.45
鹵0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
鈭梙
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(鈩?
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
10
I
B2
(mA)
鈥?0
t
on
(
碌
s)
0.8typ
t
stg
(
碌
s)
4.0typ
t
f
(
碌
s)
1.2typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
( V )
17
50mA
V
CE
( sat ) 鈥?I
B
Characteristics
(Typical)
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
17
15
( V
CE
=4 V )
10mA
2m
3m
A
1 .5 m A
15
A
1 .0 m A
C o l l e c t or C u r r e n t I
C
( A )
0 .8 m A
2
10
C o l l ec to r C u r r e n t I
C
( A)
10
mp)
e Te
(Cas
25藲C
p)
I
C
= .1 5A
I
C
= .1 0A
1
I
C
= . 5A
eT
125
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
鈥?0藲
C (C
藲C
5
I
B
=0.3mA
5
(Ca
s
ase T
emp)
em
0.5mA
2
2.6
Col l e ct or - Em it te r V ol tag e V
C E
(V)
Bas e C ur r e nt I
B
( m A)
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
(V
C E
=4 V )
50000
DC C ur re nt Ga i n h
FE
DC C ur r e nt Ga i n h
F E
50000
12
5藲C
( V
C E
= 4 V)
Transient Thermal Resistance
胃
j -a
( 藲C / W )
h
F E
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
2
Typ
10000
5000
1
10000
5000
25
藲C
0 .5
鈥?0
藲C
1000
500
02
0.5
1
C ol l e ct o r Cur ren t I
C
(A )
5
10
17
1000
500
02
0 .5
1
C ol l ec t or C ur r en t I
C
( A)
5
10
17
0 .1
1
10
10 0
Time t(ms)
1 0 0 0 20 0 0
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
80
Safe Operating Area
(Single Pulse)
200
Pc 鈥?Ta Derating
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
160
W
ith
C ut- off Fre qu e n c y f
T
(M H
Z
)
60
In
fin
120
ite
he
40
at
si
nk
80
20
40
Without Heatsink
0
25
50
75
100
12 5
1 50
0
鈥?.02
鈥?0. 1
鈥?
Em i t t er Curre nt I
E
(A)
鈥?0
5
0
A m b i e n t T em p e r a tu r e T a ( 藲 C )
159
SANKEN
1
