DATA SHEET
SILICON TRANSISTOR
2SD2463
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2463 is a Darlington connection transistor with on-
chip dumper diode in collector to emitter and zener diode in
collector to base. This transistor is ideal for use in acuator
drives such as motors, relays, and solenoids.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?Cost reduction available due to on-chip dumper diode (C to
E) and zener diode ( C to B)
鈥?Low collector saturation voltage
鈥?Insulation type package supportable for radial taping
QUALITY GRADES
鈥?Standard
Please refer to 鈥淨(jìng)uality Grades on NEC Semiconductor
Devices鈥?(Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
P
T
T
j
T
stg
T
C
= 25擄C
T
C
= 25擄C
PW
鈮?/div>
10 ms, Duty cycle
鈮?/div>
50%, T
C
= 25擄C
Conditions
Ratings
31鹵4
31鹵4
8.0
鹵2.0
鹵3.0
0.2
1.0
6.0
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16158EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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