Transistor
2SD2459
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s
q
q
q
Features
High collector to emitter voltage V
CEO
.
Low collector to emitter saturation voltage V
CE(sat)
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6鹵0.1
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
0.4max.
45擄
1.0
鈥?.2
+0.1
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
4.0
鈥?.20
0.4鹵0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
Ratings
150
150
5
1.5
1
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
EIAJ:SC鈥?2
Mini Power Type Package
Marking symbol :
2E
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
FE1
Rank classification
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 75V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
I
C
= 500mA, I
B
= 25mA
*2
I
C
= 500mA, I
B
= 25mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
150
150
5
120
40
0.11
0.8
90
12
*2
min
typ
max
0.1
Unit
碌A(chǔ)
V
V
V
340
0.3
1.2
MHz
20
pF
Pulse measurement
Rank
h
FE1
Marking Symbol
R
120 ~ 240
2ER
S
170 ~ 340
2ES
2.5鹵0.1
+0.25
V
V
1
1
2
