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2SD2425AB2 Datasheet

  • 2SD2425AB2

  • TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR

  • 127.18KB

  • 6頁(yè)

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR
2SD2425
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2425 is a transistor featuring high current
capacitance in small dimension.
This transistor is ideal for
DC/DC converters and motor drivers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?New package with dimensions in between those of small
signal and power signal package
鈥?High current capacitance
鈥?Low collector saturation voltage
鈥?Complementary transistor with 2SB1578
QUALITY GRADES
鈥?Standard
Please refer to 鈥淨(jìng)uality Grades on NEC Semiconductor
Devices鈥?(Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
Electrode connection
1. Emitter
2. Collector
3.Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
7.5 cm
2
脳
0.7 mm ceramic board mounted
PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50 %
Conditions
Ratings
60
60
6.0
5.0
7.0
1.0
2.0
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16157EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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