2SD2395
Transistors
For Power Amplification (50V, 3A)
2SD2395
Structure
NPN Silicon Epitaxial Planar Transistor
External dimensions
(Unit : mm)
TO-220FN
10.0
4.5
蠁
3.2
2.8
Features
1) Low V
CE (sat)
.
2) Wide SOA.
15.0
12.0
8.0
5.0
1.2
1.3
14.0
0.8
(1)Base
(2)Collector
(3)Emitter
2.54
(1) (2) (3)
2.54
0.75
2.6
Applications
Relay drive
DC-DC converter
Stabilized power supply
Complements
PNP
2SB1566
NPN
2SD2395
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
60
50
5
3
4.5
2
25
150
鈭?5
to
+150
Unit
V
V
V
A(DC)
A(Pulse)
鈭?
W(Ta=25
擄C)
W(Tc=25擄C)
擄C
擄C
Packaging specifications and h
FE
Package
Type
h
FE
2SD2395
EF
Code
Basic ordering unit (pieces)
Taping
鈭?/div>
500
h
FE
values are classified as follows:
Item
h
FE
E
100 to 200
F
160 to 320
Collector power dissipation
Junction temperature
Storage temperature
鈭?
Pw=100ms, Single pulse
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
鈭?
Pulse test
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min. Typ. Max. Unit
50
60
5
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
100
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
100
35
鈭?/div>
鈭?/div>
鈭?/div>
1.0
1.0
1.0
1.5
320
鈭?/div>
鈭?/div>
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
鈭?/div>
pF
I
C
=1mA
I
C
=50碌A(chǔ)
I
E
=50碌A(chǔ)
V
CB
=60V
V
EB
=4V
Conditions
I
C
/I
B
=2A/0.2A
I
C
/I
B
=2A/0.2A
V
CE
=3V, I
C
=0.5A
鈭?
鈭?
MHz V
CE
=5V, I
E
=鈭?.5A, f=30MHz
V
CB
=10V , I
E
=0A , f=1MHz
鈭?
1/1
2SD2395/E相關(guān)型號(hào)PDF文件下載
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