2SD2394
Transistors
Power Transistor (60V, 3A)
2SD2394
!Features
1) Low saturation voltage.
(Typ. V
CE(sat)
=
0.3V at I
C
/ I
B
=
2A / 0.2A)
2) Excellent DC current gain characteristics.
3) Wide SOA (safe operating area).
!External
dimensions
(Units : mm)
10.0
4.5
蠁
3.2
2.8
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : TO-220FN
!Absolute
maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
鈭?/div>
Single pulse, Pw=100ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
80
60
7
3
6
2
25
150
鈭?/div>
55
鈭?+150
Unit
V
V
V
A(DC)
鈭?/div>
A(Pulse)
W
W(Tc
=
25擄C)
擄C
擄C
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2394
TO-220FN
EF
鈭?/div>
500
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
鈭?/div>
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
80
60
7
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
100
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
8
35
Max.
鈭?/div>
鈭?/div>
鈭?/div>
10
10
1
0.8
1.5
320
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
V
鈭?/div>
MHz
pF
I
C
=
50碌A(chǔ)
I
C
=
1mA
I
E
=
50碌A(chǔ)
V
CB
=
60V
V
EB
=
7V
I
C
/I
B
=
2A/0.2A
I
C
/I
B
=
2A/0.2A
Conditions
鈭?/div>
V
CE
/I
C
=
5V/0.5A
V
CE
=
5V , I
E
= 鈭?.5A
, f
=
5MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
鈭?/div>
2SD2318F5U相關(guān)型號PDF文件下載
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