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2SD2375PQ Datasheet

  • 2SD2375PQ

  • TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB

  • 63.06KB

  • 3頁(yè)

  • ETC

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Power Transistors
2SD2375
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification with high forward current transfer ratio
I
Features
鈥?/div>
High forward current transfer ratio h
FE
which has satisfactory
linearity
鈥?/div>
Full-pack package which can be installed to the heat sink with one
screw
9.9
鹵0.3
3.0
鹵0.5
4.6
鹵0.2
2.9
鹵0.2
13.7
鹵0.2
4.2
鹵0.2
Solder Dip
15.0
鹵0.5
蠁
3.2
鹵0.1
1.4
鹵0.2
1.6
鹵0.2
0.8
鹵0.1
2.6
鹵0.1
I
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
T
C
= 25擄C
T
a
= 25擄C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
Rating
80
60
6
6
3
1
25
2
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
A
W
0.55
鹵0.15
2.54
鹵0.30
5.08
鹵0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D Package
Junction temperature
Storage temperature
I
Electrical Characteristics
T
C
=
25擄C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
*
Collector to emitter saturation voltage
Transition frequency
Note) *: Rank classification
Rank
h
FE
Q
P
I
EBO
V
CEO
h
FE
V
CE(sat)
f
T
Conditions
V
CB
= 80 V, I
E
= 0
V
CE
= 40 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
I
C
= 25 mA, I
B
= 0
V
CE
= 4 V, I
C
= 0.5 A
I
C
= 2 A, I
B
= 0.05 A
V
CE
= 12 V, I
C
= 0.2 A, f = 10 MHz
50
60
500
1 500
1
V
MHz
Min
Typ
Max
100
100
100
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
500 to 1 000 800 to 1 500
Ordering can be made by the common rank (PQ rank h
FE
= 500 to 1 500) in the rank classification.
1

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