Transistor
2SD2249
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
1.05 2.5鹵0.1
鹵0.05
6.9鹵0.1
0.15
(1.45)
0.8
0.5
4.5鹵0.1
s
q
q
0.7
4.0
Features
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Allowing supply with the radial taping.
0.65 max.
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
40
20
7
8
5
1
150
鈥?5 ~ +150
1cm
2
Unit
V
V
V
A
A
W
藲C
藲C
1
2
3
0.45
鈥?.05
+0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.45
鈥?.05
2.5鹵0.5
2.5鹵0.5
+0.1
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
or more, and the board
2.5鹵0.1
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= 鈥?0mA, f = 200MHz
*2
V
CB
= 20V, I
E
= 0, f = 1MHz
*2
min
typ
max
0.1
0.1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
20
7
230
150
0.3
150
50
1
600
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
230 ~ 380
R
340 ~ 600
Rank
h
FE1
14.5鹵0.5
q
1.0 1.0
0.2
V
1
1
2
3
