Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
5.0鹵0.1
10.0鹵0.2
1.0
s
Features
13.0鹵0.2
4.2鹵0.2
q
q
q
2.5鹵0.2
High foward current transfer ratio h
FE
High-speed switching
Allowing supply with the radial taping
(T
C
=25藲C)
90擄
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD2242
2SD2242A
2SD2242
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1.2鹵0.1
C1.0
2.25鹵0.2
18.0鹵0.5
Solder Dip
Ratings
60
80
60
80
5
8
4
15
2
150
鈥?5 to +150
Unit
V
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
emitter voltage 2SD2242A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
藲C
藲C
C1.0
1 2 3
2.5鹵0.2
2.5鹵0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
B
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD2242
2SD2242A
2SD2242
2SD2242A
2SD2242
2SD2242A
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= 鈥?2mA,
V
CC
= 50V
20
0.5
4
1
60
80
1000
2000
min
typ
E
max
200
200
500
500
2
Unit
碌A
碌A
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
10000
2.5
2
4
V
V
MHz
碌s
碌s
碌s
Rank classification
Q
P
2000 to 5000 4000 to 10000
Rank
h
FE2
1
1
2
