2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
!
Features
1) High DC current gain.
2) High emitter-base voltage. (V
CBO
=12V)
3) Low saturation voltage.
(Typ. V
CE(sat)
=0.3V at I
C
/I
B
=50mA/5mA)
!
External dimensions
(Units : mm)
2SD2654
(1)
(2)
0.2
0.5 0.5
0.3
(3)
0.8
1.6
0.15
0.2
0.55
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2654
2SD2351, 2SD2226K
2SD2227S
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
50
12
0.15
0.2
0.15
0.2
0.3
150
鈭?5~+150
擄C
擄C
W
Unit
V
V
V
A (Pulse)
鈭?/div>
A (DC)
ROHM : EMT3
EIAJ : SC-75A
0~0.1
0.7
1.0
1.6
0.1Min.
(1) Emitter
(2) Base
(3) Collector
2SD2351
(1)
0.65 0.65
0.7
0.3
(3)
1.25
2.1
0.15
0.2
(2)
Junction temperature
Storage temperature
鈭桽ingle
pulse Pw=100ms
0~0.1
0.9
1.3
2.0
ROHM : UMT3
EIAJ : SC-70
0.1Min.
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
0.4
FE
0.3Min.
Each lead has same dimensions
2SD2227S
3
4
0~0.1
鈭?/div>
Denotes
h
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
EMT3
VW
BJ
鈭?/div>
TL
3000
UMT3
VW
BJ
鈭?/div>
T106
3000
SMT3
VW
BJ
鈭?/div>
T146
3000
SPT
W
鈭?/div>
TP
5000
1.6
2.8
0.15
(3)
Type
2SD2654
2SD2351
2SD2226K
2SD2227S
0.8
1.1
0.95 0.95
1.9
2.9
!
Packaging specifications and h
FE
(2)
(1)
2SD2226K
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
2
(15Min.)
3Min.
0.45
2.5
5
0.5 0.45
ROHM : SPT
EIAJ : SC-72
(1) (2) (3)
Taping specifications
(1) Emitter
(2) Collector
(3) Base
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SD2654, 2SD2351, 2SD2226K
2SD2227S
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
60
50
12
鈭?/div>
鈭?/div>
鈭?/div>
560
1200
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
250
3.5
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.3
0.3
0.3
2700
2700
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈭?/div>
鈭?/div>
MHz
pF
I
C
=10碌A(chǔ)
I
C
=1mA
I
E
=10碌A(chǔ)
V
CB
=50V
V
EB
=12V
I
C
/I
B
=50mA/5mA
V
CE
/I
C
=5V/1mA
V
CE
/I
C
=5V/1mA
V
CE
=5V,
I
E
=鈭?0mA,
f=100MHz
V
CB
=5V,
I
E
=0A,
f=1MHz
Conditions
Transition frequency
Output capacitance
鈭桵easured
using pulse current.
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