Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1462
1.6鹵0.15
Unit: mm
s
Features
q
q
q
0.4
0.8鹵0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
0.45鹵0.1 0.3
0.75鹵0.15
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
60
50
7
200
100
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
Y
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 100碌A, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 2V, I
C
= 100mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
50
7
160
90
0.1
150
3.5
0.3
V
MHz
pF
460
min
typ
max
0.1
100
Unit
碌A
碌A
V
V
V
*
h
FE1
Rank classification
Rank
h
FE1
Q
160 ~ 260
YQ
R
210 ~ 340
YR
S
290 ~ 460
YS
Marking Symbol
0 to 0.1
0.2鹵0.1
+0.1
1
1
2
