Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification
7.0鹵0.3
3.0鹵0.2
3.5鹵0.2
s
Features
q
q
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD2215
2SD2215A
2SD2215
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
10.0
鈥?.
High collector to base voltage V
CBO
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
7.2鹵0.3
0.8鹵0.2
1.1鹵0.1
1.0鹵0.2
+0.3
0.85鹵0.1
0.4鹵0.1
0.75鹵0.1
2.3鹵0.2
4.6鹵0.4
Ratings
350
400
250
300
5
1.5
0.75
15
1.3
150
鈥?5 to +150
Unit
V
1
2
3
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
emitter voltage 2SD2215A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
3.0鹵0.2
10.2鹵0.3
7.2鹵0.3
A
A
W
1.0 max.
2.5
0.75鹵0.1
1.1鹵0.1
0.5 max.
0.9鹵0.1
0 to 0.15
藲C
藲C
1
2
3
2.3鹵0.2
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD2215
2SD2215A
2SD2215
2SD2215A
2SD2215
2SD2215A
4.6鹵0.4
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 350V, V
BE
= 0
V
CE
= 400V, V
BE
= 0
V
CE
= 150V, I
B
= 0
V
CE
= 200V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= 鈥?0.1A,
V
CC
= 50V
30
0.5
2
0.5
250
300
70
10
min
typ
1:Base
2:Collector
3:Emitter
I Type Package (Y)
max
1
1
1
1
1
Unit
mA
mA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
250
1.5
1
V
V
MHz
碌s
碌s
碌s
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
2.5鹵0.2
1.0
2.5鹵0.2
1.0
1
1
2
3
