Transistor
2SD2210
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
Unit: mm
2.6鹵0.1
0.4max.
s
Features
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
(Ta=25藲C)
Ratings
25
20
12
1
0.5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
45擄
1.0
鈥?.2
+0.1
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
3
2
1
4.0
鈥?.20
0.4鹵0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?2
Mini Power Type Package
Marking symbol :
IK
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
*3
R
on
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f= 1MHz
min
typ
max
1
Unit
碌A(chǔ)
V
V
V
25
20
12
200
60
0.13
0.4
1.2
200
10
1.0
*2
800
MHz
pF
鈩?/div>
Pulse measurement
*1
h
FE1
Rank classification
Rank
h
FE1
R
200 ~ 350
IKR
S
300 ~ 500
IKS
T
400 ~ 800
IKT
Measurement circuit
1k鈩?/div>
I
B
=1mA
f=1kHz
V=0.3V
V
B
V
V
V
A
Marking Symbol
R
on
=
V
B
!1000(鈩?
V
A
鈥揤
B
2.5鹵0.1
+0.25
V
V
1
1
2
3
