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2SD2151Q Datasheet

  • 2SD2151Q

  • TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | SOT-186

  • 4頁(yè)

  • ETC

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Power Transistors
2SD2151
Silicon NPN epitaxial planar type
Unit: mm
0.7
鹵0.1
For power switching
I
Features
鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
鈥?/div>
Satisfactory linearity of forward current transfer ratio h
FE
鈥?/div>
Large collector current I
C
鈥?/div>
Full-pack package which can be installed to the heat sink with one
screw
10.0
鹵0.2
5.5
鹵0.2
4.2
鹵0.2
2.7
鹵0.2
7.5
鹵0.2
16.7
鹵0.3
蠁
3.1
鹵0.1
4.2
鹵0.2
Solder Dip
(4.0)
1.4
鹵0.1
1.3
鹵0.2
0.5
+0.2
鈥?.1
14.0
鹵0.5
0.8
鹵0.1
I
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
T
C
= 25擄C
T
a
= 25擄C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
Rating
130
80
7
20
10
30
2
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
2.54
鹵0.3
5.08
鹵0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F Package
Junction temperature
Storage temperature
I
Electrical Characteristics
T
C
=
25擄C
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2 *
h
FE3
Collector to emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
Base to emitter saturation voltage
V
BE(sat)1
V
BE(sat)2
Transition frequency
Turn-on time
Storage time
Fall time
Note) *: Rank classification
Rank
h
FE2
Q
90 to 180
P
130 to 260
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 2 V, I
C
= 0.1 A
V
CE
= 2 V, I
C
= 3 A
V
CE
= 2 V, I
C
= 6 A
I
C
= 6 A, I
B
= 0.3 A
I
C
= 10 A, I
B
= 1 A
I
C
= 6 A, I
B
= 0.3 A
I
C
= 10 A, I
B
= 1 A
V
CE
= 10 V, I
C
= 0.5 A, f = 1 MHz
I
C
= 6 A, I
B1
= 0.6 A, I
B2
=
鈭?/div>
0.6 A,
V
CC
= 50 V
20
0.5
2.0
0.2
80
45
90
30
0.5
1.5
1.5
2.5
V
V
V
V
MHz
碌s
碌s
碌s
260
Min
Typ
Max
10
50
Unit
碌A(chǔ)
碌A(chǔ)
V
1

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