2SD2212 / 2SD2143 / 2SD1866
Transistors
Medium Power Transistor
(Motor, Relay drive) (60鹵10V, 2A)
2SD2212 / 2SD2143 / 2SD1866
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
External dimensions
(Units : mm)
2SD2212
1.0
1.5
0.4
4.0
2.5
0.5
(1)
3.0
0.5
(3)
1.5
0.4
1.5
4.5
1.6
(2)
ROHM : MPT3
EIAJ : SC-62
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SD2212
2SD2143
2SD1866
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
60鹵10
60鹵10
6
2
3
2
10
1
150
鈭?5~+150
Unit
V
V
V
A(DC)
A(Pulse)
鈭?/div>
1
W
鈭?/div>
2
W(Tc=25擄C)
W
鈭?/div>
3
擄C
擄C
(1)
0.9
0.75
2SD2143
2.3
0.4
5.5
1.5
5.1
(2)
0.9
(3)
2.3
0.65
C0.5
鈭?/div>
1 Single pulse Pw=100ms
鈭?/div>
2 When mounted on a 40脳40脳0.7mm ceramic board.
鈭?/div>
3 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
1.0
0.5
0.8Min.
0.5
1.5
2.5
9.5
2.3
Packaging specifications and h
FE
Type
2SD2212
MPT3
1k~10k
T100
1000
2SD2143
CPT3
1k~10k
TL
2500
2SD1866
ATV
1k~10k
TV2
2500
ROHM : CPT3
EIAJ : SC-63
Package
h
FE
Code
Basic ordering unit (pieces)
2SD1866
6.8
2.5
Equivalent circuit
C
0.65Max.
1.0
14.5
0.5
B
(1)
(2)
2.54
(3)
2.54
1.05
0.45
R
1
E : Emitter
B : Base
C : Collector
R
1
R
2
R
2
E
3.5k鈩?/div>
300鈩?/div>
0.9
Taping specifications
4.4
ROHM : ATV
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
鈭?/div>
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
Cob
Min.
50
50
鈭?/div>
鈭?/div>
鈭?/div>
1000
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
25
Max.
70
70
1.0
3
1.5
10000
鈭?/div>
Unit
V
V
碌A(chǔ)
mA
V
鈭?/div>
pF
Conditions
I
C
=
50碌A(chǔ)
I
C
=
5mA
V
CB
=
40V
V
EB
=
5V
I
C
/I
B
=
1A/1mA
V
CE
=
2V, IC
=
1A
V
CB
=
10V, IE
=
0A, f
=
1MHz
鈭?/div>
6.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Emitter
(2) Collector
(3) Base
2SD1866TV2 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN - 達(dá)林頓
2A
60V
1.5V @ 1mA，1A
-
1000 @ 1A，2V
1W
-
通孔
ATV
ATV
帶盒（TB）
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