Power Transistors
2SD2051
Silicon NPN epitaxial planar type Darlington
For low-frequency amplification
0.7鹵0.1
Unit: mm
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
4.2鹵0.2
7.5鹵0.2
s
Features
q
q
q
4.0
High foward current transfer ratio h
FE
Incorporating a built-in zener diode
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
60鹵10
60鹵10
5
2.5
1.6
12
2.0
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
16.7鹵0.3
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
14.0鹵0.5
0.5
鈥?.1
0.8鹵0.1
+0.2
2.54鹵0.25
5.08鹵0.5
1
2
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
3
Internal Connection
C
B
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 1.0A
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, I
B
= 1.0mA
V
CE
= 10V, I
C
= 10mA, f = 200MHz
200
50
50
5
4000
min
typ
E
max
1
1
70
70
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
40000
1.5
2.2
V
V
MHz
*
h
FE
Rank classification
Q
R
S
Rank
h
FE
4000 to 10000 8000 to 20000 16000 to 40000
1
1
2
3
