Transistor
2SD1979
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
2.1鹵0.1
0.425
1.25鹵0.1
0.425
Unit: mm
0.65
q
q
q
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
Ratings
50
20
25
500
300
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.9鹵0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
0.7鹵0.1
0 to 0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
3W
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
ON resistanse
*1
h
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE*1
V
CE(sat)
V
BE
f
T
C
ob
R
on*2
*2
R
on
Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 25V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 2V, I
C
= 4mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 2V, I
C
= 4mA
V
CB
= 6V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
typ
max
1
1
0.15
鈥?.05
s
Absolute Maximum Ratings
0.2
+0.1
0.3
鈥?
+0.1
s
Features
Unit
碌A(chǔ)
碌A(chǔ)
V
20
500
2500
0.1
0.6
80
4.5
1.0
V
V
MHz
pF
鈩?/div>
FE
Rank classification
Rank
h
FE
S
500 ~ 1500
3WS
T
800 ~ 2500
3WT
Measurement circuit
1k鈩?/div>
I
B
=1mA
f=1kHz
V=0.3V
Marking Symbol
V
B
V
V
V
A
R
on
=
V
B
!1000(鈩?
V
A
鈥揤
B
1
1
2
