Transistor
2SD1823
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
s
Features
q
q
q
q
q
2.1鹵0.1
0.425
1.25鹵0.1
0.425
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
High emitter to base voltage V
EBO
.
Low noise voltage NV.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.2
(Ta=25藲C)
Ratings
50
40
15
100
50
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
0.7鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
0.9鹵0.1
0 to 0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
1Z
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
50
40
15
400
1000
0.05
120
2000
0.2
V
MHz
min
typ
max
100
1
Unit
nA
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
R
400 ~ 800
1ZR
S
T
600 ~ 1200 1000 ~ 2000
1ZS
1ZT
0.15
鈥?.05
+0.1
0.3
鈥?
+0.1
1
1
2
3
