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2SD1775A Datasheet

  • 2SD1775A

  • Silicon NPN triple diffusion planar type(For high-speed swit...

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  • PANASONIC

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Power Transistors
2SD1775, 2SD1775A
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
10.0鹵0.3
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
s
Features
q
q
q
10.5min.
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
80
100
60
80
6
4
2
0.5
25
1.3
150
鈥?5 to +150
Unit
V
1.5max.
1.1max.
2.0
0.8鹵0.1
0.5max.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1775
2SD1775A
2SD1775
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
2.54鹵0.3
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
emitter voltage 2SD1775A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
V
V
A
A
A
W
10.0鹵0.3
8.5鹵0.2
6.0鹵0.3
1.5
鈥?.4
2.0
3.0
鈥?.2
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
藲C
藲C
1
2
3
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1775
2SD1775A
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
Conditions
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 300mA
I
C
= 1A, I
B
= 25mA
I
C
= 1A, I
B
= 25mA
V
CE
= 12V, I
C
= 200mA, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 1A, I
B1
= 25mA, I
B2
= 鈥?5mA,
V
CC
= 50V
40
30
0.6
2.5
1.0
60
80
500
min
typ
1:Base
2:Collector
3:Emitter
N Type Package (DS)
4.4鹵0.5
max
100
100
100
100
Unit
碌A
碌A
碌A
V
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD1775
2SD1775A
V
CEO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
FE
1500
1.0
1.2
V
V
MHz
pF
碌s
碌s
碌s
Rank classification
Q
P
h
FE
500 to 1000 800 to 1500
Rank
14.7鹵0.5
+0.4
+0
1

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