Power Transistors
2SD1771, 2SD1771A
Silicon NPN triple diffusion planar type
For power amplification
10.0鹵0.3
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
For TV vertical deflection output
Complementary to 2SB1191 and 2SB1191A
s
Features
2.0
1.5max.
1.1max.
q
q
q
High collector to emitter V
CEO
Large collector power dissipation P
C
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
200
200
150
180
6
2
1
25
1.3
150
鈥?5 to +150
Unit
10.5min.
0.8鹵0.1
0.5max.
2.54鹵0.3
5.08鹵0.5
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1771
2SD1771A
2SD1771
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
V
10.0鹵0.3
6.0鹵0.3
1.5
鈥?.4
2.0
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
A
A
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
W
1
2
3
藲C
藲C
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD1771
2SD1771A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 5mA, I
B
= 0
I
E
= 0.5mA, I
C
= 0
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 300mA
V
CE
= 10V, I
C
= 300mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 100mA, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
20
27
150
180
6
60
50
1
1
V
V
MHz
pF
240
min
typ
max
50
50
Unit
碌A(chǔ)
碌A(chǔ)
V
V
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE1
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
4.4鹵0.5
Emitter to base voltage
V
3.0
鈥?.2
+0.4
emitter voltage 2SD1771A
14.7鹵0.5
V
+0
1
1
2
3
